9.0 volt temperatur e compensat ed zener reference diodes scottsd a l e division 1n935 thru 1n940b- 1 w w w . mi c r o s e m i . c o m 1 n 9 3 5 - 1 n 9 4 0 b - 1 9 3 5 - 1 n 9 4 0 b - 1 descripti on appeara n c e the pop ula r 1n9 35 thru 1 n 94 0b se rie s of zero-t c referen c e dio des provide s a se lection of 9.0 v nominal vol t ages a nd te mperature co efficients to as low a s 0 . 0002%/ o c fo r minimal voltage chan ge with tempe r at ure when operated at 7 . 5 ma. these glass axia l-l eade d do -7 referen c e di od es are also avail able in jan, jantx, and jantxv military qualifications. microsemi also offers n u me rou s othe r ze ner referen c e diod e pro d u cts fo r a variety of other voltage s from 6.2 v to 200 v. do-7 (do-204aa) import a n t : f o r the most cur r e n t data, consult mi c r os e m i ? s w e bsite: http:// www .microsemi.com features a p p l i c at ions / be ne fi ts ? jedec reg i ste r ed 1n 935 thr u 1n94 0 series ? standar d refer ence vo ltag e of 9.0v + / - 5% ? 1n9 35b, 93 7b, 938b, 93 9b, 940b als o hav e militar y qua lificati on to mil-prf - 195 0 0 /156 u p to the jant xv level b y add in g jan, jant x, or jant xv prefi x es to part numbers as w e ll as ?-1? suffi x, e.g. jant x1n9 38b -1, etc. ? internal meta ll urgic a l bo nds ? jans equiv a le nt avail abl e via scd ? radi atio n har d ene d dev ices a v aila bl e b y c h a ngi ng ?1n? prefi x to ?rh?, e.g. rh9 38b, rh 94 0b, etc. also cons ult factor y for ?rh? data she e t bro c hure ? provid es mini mal volta ge ch ang es over a b r oad temperatur e ra nge ? f o r instrument ation a nd oth e r circuit desi gns requ irin g a stable vo ltag e referenc e ? maximum tem peratur e coeffi cient sel e ction s avail a b l e from 0.01%/oc to 0. 000 2%/oc ? t i ght voltage toler ances av ai l abl e w i th n o mi nal voltag e of 9.2 v b y a ddi ng tol e ranc e 1%, 2% , 3%, etc. after the part number for further ide n tific a tion, e.g. 1n93 8b-2 %, 1n94 0b-1 %, 1n93 9b-1- 1 %, etc. ? f l exibl e a x i a l-l ead ed mo untin g termina ls ? nons ensitiv e to esd per mil - st d-750 method 102 0 max i mu m rat ing s mechan ic al an d pa ckagin g ? operatin g & storag et empera t ure: -65 o c to +175 o c ? dc po w e r d i ss ipati on: 500 m w @ t l = 25 o c and maximum curr ent i zm of 50 ma. not e : f o r optimum voltag e-temper ature stabi lit y , i z = 7.5 ma (less than 75 mw in dissi pated p o w e r) ? sold er temper atures: 260 o c for 10 s (max i mum) ? case: hermetically sealed glass case w i th do-7 (d o-2 0 4 aa) pa cka ge ? t e rminals: t i n-lead pl ated and sol der abl e per mil-st d-750, method 2 0 2 6 ? marking: part number an d cathod e ba nd ? polarit y : r e ferenc e di ode to be oper ated w i th the ban de d en d positiv e w i th respect to the opp osite e nd ? t ape & reel optio n: standa rd per eia-296 (add ?t r? suffix to part number) ? w e igh t : 0.2 grams. ? see pack a g e d i mensi ons o n l a st page m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 1 cop y right ? 200 3 8-21-2 003 rev a
9.0 volt temperatur e compensat ed zener reference diodes scottsd a l e division 1n935 thru 1n940b- 1 w w w . mi c r o s e m i . c o m 1 n 9 3 5 - 1 n 9 4 0 b - 1 *electric a l ch ara cteri s tic s @ 25 o c, u n less otherwise specified zener vo lt a g e v z @ i zt (no t es 1, 4 & 5) zener test curren t i zt ma x i m u m zener imped a n ce (no t e 2) z zt @ i zt ma x i m u m reverse curren t i r @ 6 v vo lt a g e temper a t ure st a b ili t y (no t es 3 & 4) ? v zt ma x i m u m temper a t ure ra n g e effective temper a t ure coef ficien t vz jedec type numbers (no t es 1 & 5) v o l t s m a o h m s a m v o c % / o c 1n9 35 1n9 3 5 a 1n9 35b 8.55-9.4 5 8.55-9.4 5 8.55-9.4 5 7.5 7.5 7.5 20 20 20 10 10 10 67 139 184 0 to + 75 -55 to + 100 -55 to + 150 0.01 0.01 0.01 1n9 36 1n9 3 6 a 1n9 36b 8.55-9.4 5 8.55-9.4 5 8.55-9.4 5 7.5 7.5 7.5 20 20 20 10 10 10 33 69 92 0 to + 75 -55 to + 100 -55 to + 150 0.005 0.005 0.005 1n9 37 1n9 3 7 a 1n9 37b 8.55-9.4 5 8.55-9.4 5 8.55-9.4 5 7.5 7.5 7.5 20 20 20 10 10 10 13 27 37 0 to + 75 -55 to + 100 -55 to + 150 0.002 0.002 0.002 1n9 38 1n9 3 8 a 1n9 38b 8.55-9.4 5 8.55-9.4 5 8.55-9.4 5 7.5 7.5 7.5 20 20 20 10 10 10 6 13 18 0 to + 75 -55 to + 100 -55 to + 150 0.001 0.001 0.001 1n9 39 1n9 3 9 a 1n9 39b 8.55-9.4 5 8.55-9.4 5 8.55-9.4 5 7.5 7.5 7.5 20 20 20 10 10 10 3 7 9 0 to + 75 -55 to + 100 -55 to + 150 0.000 5 0.000 5 0.000 5 1n9 40 1n9 4 0 a 1n9 40b 8.55-9.4 5 8.55-9.4 5 8.55-9.4 5 7.5 7.5 7.5 20 20 20 10 10 10 1.3 2.7 3.7 0 to + 75 -55 to + 100 -55 to + 150 0.000 2 0.000 2 0.000 2 *j ede c regis t ered data. notes: 1 . w hen ord e ri ng devices w i th tighter tolera nces than specified, use a nominal volt age of 9.2v and add a h y phenate d suffix to the pa rt nu mber for desired tolerance at the end of the pa rt n u mber, e.g. 1n9 38b-2%, 1n939 b-1%, 1 n 939b-1 -1%, etc. 2. measur ed b y supe rimpo s ing 0.75 ma ac rms on 7.5 ma d c @ 25 o c. 3. the ma ximum allowable change o b served over the entire temp e r atu r e rang e i.e., the diode voltage w ill not exceed t he specified mv cha nge at an y discrete temperat ure b e tween the estab lished lim its. 4. voltage measure m ents to be perf o rmed 15 secon d s after application of dc current. 5. the 1n93 5b, 937b, 938b, 939b, 940b also have military qua lific at ion to mil-p r f-19 500/156 u p to the jantxv level by adding jan, jantx, or ja ntxv prefi x es to part numbe rs as w e ll as ?- 1? suffi x, e.g. jantx 1 n 938b-1, etc. 6. designate radiat ion hardene d de vices w i th ?rh? p r efix instead of ?i n?, i.e. rh9 38a instead of 1n938 a. graphs change in tempe r ature coefficient (mv/ o c) i z ? ope r ating c u rrent (ma) change in tempe r ature coefficient (%/ o c) the curve shown in figure 1 is typical of the diode series and greatly sim p lifies the estim a tion of the te m p e r atur e coefficient (tc ) when t he di ode is operated at currents othe r than 7.5 m a. exam ple: a di ode in this series is operated at a current of 7.5m a and has s pecified tem p er ature co efficient (tc ) lim i t 0.005%/ o c. t o o b tain the typical te m per ature co efficient lim its fo s o f + / - r this sam e diode operated at a cur r ent of 6.0 m a, t h e new t c lim its (%/ o c) can be estim a ted using the graph in fi gu r e 1. at a test current of 6.0 m a the cha nge in te m p e r at ure coefficient (tc ) is approximately ?0.0009%. o c. the algeb raic sum of +/ - 0.005% o c and ? 0 .0009%/ o c give s the new estim a ted lim its of +0.0041%/o c an d -0.0059 %/oc. figure 1 typical change of temperature coeffi cient with change in operating curre nt. m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 2 cop y right ? 200 3 8-21-2 003 rev a
9.0 volt temperatur e compensat ed zener reference diodes m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 3 cop y right ? 200 3 8-21-2 003 rev a w w w . mi c r o s e m i . c o m scottsd a l e division 1n935 thru 1n940b- 1 1 n 9 3 5 - 1 n 9 - 1 9 3 5 - 1 n 9 - 1 ? v z ? ch ange in zener voltag e ( m v) this curve in figure 2 illustrates the change of dio d e voltage arising from th e effect of i m pe dance. it is in effect an explode d view of the z e n e r oper ating region of the i - v characteristic. in conjunction with figure 1, t h is curve can be used to estim a te tot a l voltage regulation under condition s of both varying te m p e r atu r e and c u rrent. i z ? ope r ating c u rrent (ma) figure 2 typical change of ze ner voltage with cha nge in operating current. dimen s io ns 4 0 b 4 0 b mm all dimensio ns in inch
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